Peter Blakey
Peter Blakey | |
|---|---|
| Residence | Flagstaff, AZ, United States |
| Alma mater | University of Oxford University of London University of Michigan |
| Scientific career | |
| Fields | Electrical engineering, semiconductor device physics |
| Institutions | University of Michigan Motorola Northern Arizona University University of Texas at Dallas |
Peter Blakey is an electrical engineer and semiconductor device physicist. He is a Professor Emeritus of Electrical Engineering at Northern Arizona University in Flagstaff, Arizona, and has worked in both academia and the semiconductor industry on the physics, modeling and simulation of high-speed semiconductor devices.
Biography
Blakey received a B.A. from the University of Oxford and a Ph.D. from the University of London in 1976. He later earned an M.B.A. from the University of Michigan.
During the late 1970s and early 1980s he worked in the Electron Physics Laboratory at the University of Michigan, where he collaborated with researchers including J. R. East, R. K. Mains, R. O. Grondin and G. I. Haddad on the modeling of microwave transit-time devices. He subsequently worked in industry on semiconductor technology modeling and simulation, including work associated with Motorola's device and process modeling efforts.
Blakey joined the faculty of Northern Arizona University in 2002 as Professor of Electrical Engineering and retired in 2006, after which he was carried on the department's rolls as faculty emeritus. He later served as a Senior Lecturer in the Department of Electrical Engineering at the University of Texas at Dallas.
Work
Blakey's research has centered on the physics, modeling and computer simulation of semiconductor devices, particularly high-frequency and submicron structures. His early work addressed large-signal behavior in the avalanche region of high-efficiency IMPATT diodes, presented at the 6th European Microwave Conference in 1976, and continued with simulations of IMPATT diodes that included conservation of energy and momentum.
Later work dealt with energy-balance and simplified hydrodynamic models for the steady-state and transient analysis of submicron devices, Monte Carlo simulation of semiconductor devices, and breakdown simulation including energy balance and lattice heating. He has also written on the industrial perspective on semiconductor technology modeling, addressing how device and process simulation tools are actually applied in manufacturing environments.
Selected publications
- "Large Signal Effects in the Avalanche Region of High-Efficiency IMPATT Diodes", 6th European Microwave Conference, 1976.
- with J. R. East, "Improved Modeling of GaAs IMPATTs", Seventh Biennial Conference on Active Microwave Semiconductor Devices and Circuits, Ithaca, NY, 1979.
- with R. K. Froelich, "Simulation of IMPATT Diodes Including Conservation of Energy and Momentum".
- "An Industrial Perspective on Semiconductor Technology Modeling".